Vertical light emitting devices with nickel silicide bonding and methods of manufacturing

ABSTRACT

Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.14/456,730, filed Aug. 11, 2014, which is a divisional of U.S.application Ser. No. 13/053,932 filed Mar. 22, 2011, now U.S. Pat. No.8,802,461, which is incorporated herein by reference.

TECHNICAL FIELD

The present disclosure is related generally to light emitting devices(e.g., light emitting diodes (“LEDs”)) with a nickel silicide (NiSi)bonding interface and associated methods of manufacturing.

BACKGROUND

During the manufacturing of LEDs with vertical contacts, the LEDs aretypically first formed on a growth substrate and subsequently bonded toa carrier via copper-copper (Cu—Cu) or nickel-tin (Ni—Sn) bonding. FIGS.1A-1C illustrate a process for manufacturing an LED with Ni—Sn bondingin accordance with the prior art. As shown in FIG. 1A, the processinitially includes forming N-type gallium nitride (GaN) 14, GaN/indiumgallium nitride (InGaN) multiple quantum wells (“MQWs”) 16, and P-typeGaN 18 on a substrate material 12 with a buffer material 13.Subsequently, a first metal stack 19 is formed on the P-type GaN 18 viasputtering, electrolysis, and/or other suitable techniques. The firstmetal stack 19 includes a barrier material 20 (e.g., tungsten/titanium(W/Ti)), a copper (Cu) seed material 22, nickel (Ni) 24, and tin (Sn)26.

As shown in FIG. 1B, a similar second metal stack 19′ is formed on acarrier 32. The second metal stack 19′ includes a barrier material 20′,a copper (Cu) seed material 22′, nickel (Ni) 24′, and tin (Sn) 26′. Themultiple materials of the first and second metal stacks 19 and 19′ areselected based on a target stress level on the substrate material 12. Asshown in FIG. 1C, the substrate material 12 with the first metal stack19 is then stacked on the carrier 32 such that the first and secondmetal stacks 19 and 19′ face each other. The first and second metalstacks 19 and 19′ are then bonded to each other using an annealingprocess to form an assembly 10. The substrate material 12 (shown inphantom lines) is then removed from the assembly 10 before the assembly10 is diced into individual LED dies.

The bonded substrate material 12 and the carrier 32 formed according tothe process discussed above tend to bow and/or otherwise flex withtemperature fluctuations. Such flexure can crack and/or otherwise damagethe N-type GaN 14, the GaN/InGaN MQWs 16, and/or the P-type GaN 18.Also, it has been observed that various materials in the first and/orsecond metal stacks 19 and 19′ tend to peel off from the assembly 10during dicing. It is believed that delamination between two adjacentmaterials in the first and second metal stacks 19 and 19′ contribute tosuch delamination. In addition, the foregoing assembling process is timeconsuming and costly because a large number of metals are deposited inseries. Accordingly, several improvements to the bonding techniques usedto efficiently manufacture LED dies may be desirable.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1C illustrate a process for manufacturing an LED with Ni—Snbonding in accordance with the prior art.

FIGS. 2A-2H illustrate a process for manufacturing an LED with Ni—Sibonding in accordance with selected embodiments of the technology.

FIGS. 3A-3F illustrate a process for manufacturing an LED with Ni—Sibonding in accordance with additional embodiments of the technology.

DETAILED DESCRIPTION

Various embodiments of light emitting devices, assemblies, and methodsof manufacturing are described below. As used hereinafter, the term“light emitting device” generally refers to LEDs, laser diodes, and/orother suitable solid state sources of illumination other than electricalfilaments, a plasma, or a gas. A person skilled in the relevant art willalso understand that the technology may have additional embodiments, andthat the technology may be practiced without several of the details ofthe embodiments described below with reference to FIGS. 2A-3F.

FIGS. 2A-2H illustrate a process for manufacturing a light emittingdevice 100 with Ni—Si bonding in accordance with selected embodiments ofthe technology. In the following description, common acts and structuresare identified by the same reference numbers. Even though onlyparticular processing operations and associated structures areillustrated in FIGS. 2A-2H, in certain embodiments, the process can alsoinclude forming a lens, a mirror, suitable support structures,conductive interconnects, and/or other mechanical/electrical components(not shown) associated with a packaged light emitting device.

As shown in FIG. 2A, an initial stage of the process can include forminga first semiconductor material 104, an active region 106, and a secondsemiconductor material 108 (collectively referred to as a “lightemitting structure 111” hereinafter) on a substrate material 102. In oneembodiment, the substrate material 102 includes a silicon (Si) waferwith a Si(1,1,1) crystal orientation at a surface 102 a of the substratematerial 102. In other embodiments, the substrate material 102 can alsoinclude aluminum gallium nitride (AlGaN), GaN, silicon carbide (SiC),sapphire (Al₂O₃), a combination of the foregoing materials, and/or othersuitable substrate materials.

In the illustrated embodiment, the substrate material 102 optionallyincludes a first buffer material 103 a and a second buffer material 103b (collectively referred to as buffer materials 103) on the surface 102a. The optional buffer materials 103 can individually include aluminumnitride (AlN), GaN, zinc nitride (ZnN), and/or other suitable materials.In other embodiments, the substrate material 102 may include only one ofthe buffer materials 103. In further embodiments, the buffer materials103 may be omitted, and the light emitting structure 111 may be formeddirectly on the surface 102 a of the substrate material 102. In yetfurther embodiments, other intermediate materials (e.g., zinc oxide(ZnO₂)) may be formed on the substrate material 102 in addition to or inlieu of the buffer materials 103.

In one embodiment, the first and second semiconductor materials 104 and108 include an N-type GaN material and a P-type GaN material,respectively. In another embodiment, the first and second semiconductormaterials 104 and 108 include a P-type GaN material and an N-type GaNmaterial, respectively. In further embodiments, the first and secondsemiconductor materials 104 and 108 can individually include at leastone of gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs),gallium arsenide phosphide (GaAsP), gallium(III) phosphide (GaP), zincselenide (ZnSe), boron nitride (BN), AlGaN, and/or other suitablesemiconductor materials.

The active region 106 can include a single quantum well (“SQW”), MQWs,and/or a bulk semiconductor material. As used hereinafter, a “bulksemiconductor material” generally refers to a single grain semiconductormaterial (e.g., InGaN) with a thickness greater than about 10 nanometersand up to about 500 nanometers. In certain embodiments, the activeregion 106 can include an InGaN SQW, InGaN/GaN MQWs, and/or an InGaNbulk material. In other embodiments, the active region 106 can includealuminum gallium indium phosphide (AlGaInP), aluminum gallium indiumnitride (AlGaInN), and/or other suitable materials or configurations. Inany of the foregoing embodiments, the first semiconductor material 104,the active region 106, the second semiconductor material 108, and thebuffer materials 103 can be formed on the substrate material 102 viametal organic chemical vapor deposition (“MOCVD”), molecular beamepitaxy (“MBE”), liquid phase epitaxy (“LPE”), hydride vapor phaseepitaxy (“HVPE”), and/or other suitable epitaxial growth techniques.

An optional stage of the process can include forming a conductivematerial 110 on substantially the entire surface area of the secondsemiconductor material 108. The conductive material 110 is at leastpartially transparent to the radiation generated by the light emittingstructure 111. In certain embodiments, the conductive material 110 caninclude indium tin oxide (“ITO”), aluminum zinc oxide (“AZO”),fluorine-doped tin oxide (“FTO”), and/or other suitable transparentconductive oxide (“TCOs”). In other embodiments, the conductive material110 can include other suitable conductive and transparent materials.Techniques for forming the conductive material 110 can include MOCVD,MBE, spray pyrolysis, pulsed laser deposition, sputtering,electroplating, and/or other suitable deposition techniques. In furtherembodiments, the conductive material 110 may be omitted.

FIG. 2B illustrates another stage of the process, in which a pluralityof openings 112 are formed in the optional conductive material 110 andthe light emitting structure 111, and a passivation material 114 isformed or deposited in the openings 112. The openings 112 individuallycontain passivation material 114. Two openings 112 are shown in FIG. 2Bfor illustration purposes, though any other desired numbers of openings112 may be formed. In certain embodiments, the individual openings 112can delineate individual light emitting dies 113. In other embodiments,the openings 112 can insulate and/or form other suitable structuresbetween adjacent sections of the light emitting structure 111 inaddition to or in lieu of delineating the individual light emitting dies113.

In the illustrated embodiment, the openings 112 include sidewalls 115extending through the conductive material 110, the first semiconductormaterial 104, the active region 106, the second semiconductor material108, the buffer materials 103, and into a portion of the substratematerial 102. In other embodiments, at least some of the openings 112include sidewalls 115 extending through the conductive material 110 intoa portion of the buffer materials 103 without extending into thesubstrate material 102. In further embodiments, the openings 112 caninclude sidewalls 115 extending through the conductive material 110 intoa portion of the first semiconductor material 104 without extending intothe buffer material 103. In any of the foregoing embodiments, theopenings 112 can include sidewalls 115 extending through at least theactive region 106 of the light emitting structure 111.

The passivation material 114 can include at least one of silicon oxide(SiO₂), silicon nitride (Si₃N₄), and/or other suitable insulativematerials. In the illustrated embodiment, the passivation material 114only partially fills the openings 112. Thus, the passivation material114 includes a first end 114 a proximate the substrate material 102 anda second end 114 b recessed from the conductive material 110. As such,the second end 114 b is spaced apart from the conductive material 110 inthis embodiment. In other embodiments, the passivation material 114 maycompletely fill the openings 112 such that the second end 114 b isgenerally planar with the conductive material 110. In furtherembodiments, the passivation material 114 may be a thinner structurethat generally conforms to the contour of the substrate material 102 andthe sidewalls 115 of the openings 112 without filling the openings 112.In any of the foregoing embodiments, the passivation material 114 coversat least the active region 106 of the light emitting structure 111.

FIG. 2C illustrates another stage of the process in which a barriermaterial 116, a mirror material 118, and a bonding material 120(collectively referred to as a bonding stack 122) are formed on theoptional conductive material 110 in series. The barrier material 116 caninclude nickel (Ni), tantalum (Ta), cobalt (Co), ruthenium (Ru),tantalum nitride (TaN), indium oxide (In₂O₃), tungsten nitride (WN₂),titanium nitride (TiN), and/or other suitable diffusion resistantmaterials. The mirror material 118 can include silver (Ag), aluminum(Al), and/or other suitable reflective materials. The bonding material120 can include nickel (Ni) and/or a nickel alloy with a thicknessbetween about 100 Angstroms and about 300 Angstroms or other suitablethickness values. Techniques for forming the barrier material 116, themirror material 118, and the bonding material 120 can includesputtering, electroplating, and/or other suitable deposition techniques.

In the illustrated embodiment, the bonding stack 122 include a firstbonding portion 122 a on the optional conductive material 110 and asecond bonding portion 122 b in the individual openings 112. The end ofthe second bonding portion 122 b can abut the passivation material 114.In other embodiments, the first bonding portion 122 a may be formeddirectly on the second semiconductor material 108 when the conductivematerial 110 is omitted. In further embodiments in which the passivationmaterial 114 generally conforms to the sidewalls 115 of the openings112, the second bonding portion 122 b may extend into a cavity in thepassivation material as deep as the first semiconductor material 104and/or the buffer materials 103. In embodiments in which the passivationmaterial 114 is planar to the surface of the light emitting structure111, the second bonding material 112 b can also be generally planar.

FIG. 2D illustrates another stage of the process, in which the lightemitting structure 111 is mounted on a carrier 132 with the bondingstack 122 in direct contact with a surface 132 a of the carrier 132. Inone embodiment, the carrier 132 can include a silicon (Si) wafer with aSi(1,0,0) crystal orientation and with P-type doped (e.g., with boron(B)) polysilicon at the surface 132 a of the carrier 132. In otherembodiments, the silicon wafer may have other doping characteristics ormay be undoped. In further embodiments, the carrier 132 may include aceramic and/or other suitable types of carrier materials. Even thoughthe carrier 132 is shown as a single material in FIG. 2D, in furtherembodiments, the carrier 132 may also include a heat sink, electrodes,and/or other suitable structures and components.

An optional stage of the process can include polishing and/or cleaningthe surface 132 a of the carrier 132 before to mounting the lightemitting structure 111 thereon. In one embodiment, the carrier 132 maybe polished using chemical mechanical polishing (“CMP”),electrochemical-mechanical polishing (“ECMP”), and/or other suitablepolishing techniques. As a result, the surface 132 a can be at leastpartially planarized. In other embodiments, the surface 132 a of thecarrier 132 may also be treated with a solution of hydrofluoric acid(HF), a base (e.g., potassium hydroxide (KOH)), an oxidizer (e.g.,hydrogen peroxide (H₂O₂), and/or other suitable compositions. After thetreatment, adsorbed particles may be removed from the surface 132 a.Surface oxides, nitrides, and/or other compounds of silicon may also beremoved. As a result, the carrier 132 includes exposed silicon atoms onthe surface 132 a that are in direct contact with the bonding material120 of the bonding stack 122.

FIG. 2E illustrates a subsequent stage of the process in which the lightemitting structure 111 and the carrier 132 are bonded together. In FIG.2E, a portion of the interface between the bonding stack 122 and thecarrier 132 is enlarged for clarity. In certain embodiments, bonding thelight emitting structure 111 to the carrier 132 includes heating atleast the bonding stack 122 and the carrier 132 to a bonding temperaturevia conduction, convection, radiation, a combination thereof or by othersuitable means. The bonding temperature can be maintained for a periodof time (referred to hereinafter as the “bonding period”) under abonding pressure. The bonding temperature can be from about 300° C. toabout 450° C. (e.g., 300° C., 350° C., 400° C., or 450° C.), and/orother suitable values. The bonding period can last from about 1 to about30 minutes and/or other suitable values. The bonding pressure can befrom about 50 mPa to about 100 mPa (e.g., 50 mPa, 55 mPa, 60 mPa) and/orother suitable values.

Without being bound by theory, it is believed that the heating of thebonding stack 122 and the carrier 132 causes at least a portion of thebonding material 120 containing nickel (Ni) to react with the P-typepolysilicon (and/or other silicon materials) on the surface 132 a of thecarrier 132. The reaction consumes a portion of the bonding material 120and forms nickel silicide (NiSi) 136 at the interface between thecarrier 132 and the bonding material 120 to mechanically bond the lightemitting structure 111 and the carrier 132 together. The formed NiSi 136may have a thickness between about 10 Angstroms and about 100 Angstroms.

In any of the foregoing embodiments, the process can include adjustingat least one of the bonding temperature, the bonding period, the bondingpressure, and/or other suitable operating conditions based on thedesired thickness of the bonding material 120 remaining after thecompletion of the reaction. In one embodiment, the desired remainingthickness of the bonding material 120 is greater than about 30Angstroms. In other embodiments, the desired remaining thickness of thebonding material 120 can be 40 Angstroms, 50 Angstroms, and/or othersuitable thickness values.

In several embodiments, the remaining unconsumed portion of the bondingmaterial 120 can form a diffusion barrier between the mirror material118 and the carrier 132. As a result, the desired thickness of theremaining bonding material 120 can be determined based on empirical dataand/or other suitable information so that the remaining bonding material120 can prevent the mirror material 118 from migrating to the carrier132. In further embodiments, the bonding material 120 may be completelyconsumed when the bonding stack 122 includes an additional diffusionbarrier (not shown) between the mirror material 118 and the carrier 132.

FIG. 2F illustrates another stage of the process, in which the substratematerial 102 and the buffer materials 103 are removed from the lightemitting structure 111. Techniques for removing the substrate material102 and the buffer materials 103 can include back grinding, dry etching,wet etching, and/or other suitable material removal techniques. In theillustrated embodiment, the material removal operation is stopped at thefirst semiconductor material 104. In other embodiments, a portion of thefirst semiconductor material 104 may also be removed from the lightemitting structure 111.

FIG. 2G illustrates another stage of the process, in which firstelectrodes 138 are formed on the first semiconductor material 104. Inone embodiment, forming the first electrodes 138 can include depositingan electrical conductor (e.g., aluminum (Al), titanium (Ti), and/or analuminum/titanium (Al/Ti) alloy) on the first semiconductor material 104via sputtering and/or other suitable techniques. Subsequently, thedeposited electrical conductor can be patterned based on a desiredelectrode pattern. During the deposition and/or patterning operations,the process can also include controlling the temperatures of theseoperations to be below the stability temperature of the NiSi 136. In oneembodiment, the target stability temperature is about 550° C. In otherembodiments, the target stability temperature can be about 600° C., 650°C., 700° C., and/or other suitable temperature values.

FIG. 2H illustrates another stage of the process, in which theindividual light emitting dies 113 are singulated along the openings112. As a result, at least a section of the second bonding portions 122b remain on sidewalls 115 of the individual light emitting dies 113.Techniques for singulating the individual light emitting dies 113 caninclude dicing, laser ablation, dry etching, and/or other suitabletechniques. Subsequently, the process can also include cleaning,packaging, and/or other suitable post-processing operations (not shown).

Several embodiments of the process discussed above with reference toFIGS. 2A-2H can bond the light emitting structure 111 to the carrier 132more efficiently than conventional techniques. As discussed withreference to FIGS. 1A-1C, the conventional Ni—Sn bonding techniquerequires at least four metal materials to be formed on each of thesubstrate material 12 (FIG. 1A) and the carrier 32 (FIG. 1B). Incontrast, certain embodiments of the current technique include reactinga portion of the bonding material 120 with a silicon material on thecarrier 132 and using the remaining portion of the bonding material 120as a diffusion barrier. As a result, the number of deposition operationscan be significantly reduced as compared to the conventional technique,thus reducing manufacturing complexity and costs.

Even though the process discussed above with reference to FIGS. 2A-2Hincludes forming the plurality of openings 112 prior to forming thebonding stack 122 on the light emitting structure 111, in otherembodiments, the sequence of the process may be different and/or includeother operations. For example, FIGS. 3A-3F illustrate another embodimentof the process, in which the bonding stack 122 is formed on the lightemitting structure 111 without forming the openings 112.

As shown in FIG. 3A, an initial stage of the process can include formingthe bonding stack 122 on the optional conductive material 110. Likereference numbers refer to common components in FIGS. 2A-3F. Unlike theembodiments shown in FIG. 2C, the bonding stack 122 in FIG. 3A isgenerally planar. As shown in FIG. 3B, the light emitting structure 111is mounted on the carrier 132 with the bonding stack 122 in directcontact with a surface 132 a of the carrier 132. Subsequently, as shownin FIG. 3C, the light emitting structure 111 and the carrier 132 arebonded together with techniques generally similar to those discussedabove with reference to FIG. 2E. As shown in FIG. 3D, the substratematerial 102 and the optional buffer materials 103 have been removedfrom the light emitting structure 111. As shown in FIG. 3E, firstelectrodes 138 can then be formed on the exposed first semiconductormaterial 104. The light emitting structure 111 and the bonded carrier132 can then be singulated into individual light emitting dies 113, asshown in FIG. 3F.

Several embodiments of the process discussed above with reference toFIGS. 3A-3F may have a higher bonding strength between the bondingmaterial 120 and the carrier 132 than that discussed above withreference to FIGS. 2A-2H because the interface therebetween is generallycontinuous, as shown in FIGS. 3B and 3C. Also, several embodiments ofthe process discussed above further simplify the process discussed abovewith reference to FIGS. 2A-2H by eliminating the formation of theopenings 112 and deposition of the passivation material 114 therein. Asa result, the complexity and costs related to the process may be furtherreduced as compared to conventional techniques.

From the foregoing, it will be appreciated that specific embodiments ofthe technology have been described herein for purposes of illustration,but that various modifications may be made without deviating from thedisclosure. In addition, many of the elements of one embodiment may becombined with other embodiments in addition to or in lieu of theelements of the other embodiments. Accordingly, the disclosure is notlimited except as by the appended claims.

I/We claim:
 1. A lighting emitting die, comprising: a light emittingstructure; a silicon substrate spaced apart from the light emittingstructure; a bonding stack between the light emitting structure and thesilicon substrate, the bonding stack mechanically coupling the lightemitting structure to the silicon substrate, wherein the bonding stackincludes: a barrier material on the light emitting structure; a bondingmaterial spaced apart from the barrier material, the bonding materialcontaining nickel (Ni), a mirror material directly between the barriermaterial and the bonding material; and a nickel silicide (NiSi) materialat an interface between the silicon substrate and the bonding material.2. The light emitting die of claim 1 wherein: the barrier materialcontains nickel (Ni); and the mirror material contains silver (Ag). 3.The light emitting die of claim 1 wherein: the barrier material containsnickel (Ni); the mirror material contains silver (Ag); and the bondingstack consists essentially of the barrier material, the bondingmaterial, the mirror material, and the nickel silicide material.
 4. Thelight emitting die of claim 1 wherein: the light emitting die furtherincludes a conductive material between the light emitting structure andthe bonding stack, the conductive material containing at least one ofindium tin oxide, aluminum zinc oxide, and fluorine-doped tin oxide; thesilicon substrate includes a P-type silicon substrate; the barriermaterial contains nickel (Ni); the mirror material contains silver (Ag);and the bonding stack consists essentially of the barrier material, thebonding material, the mirror material, and the nickel silicide material.5. The light emitting die of claim 1 wherein: the barrier materialcontains nickel (Ni); the mirror material contains silver (Ag); and thebonding material has a thickness of about 30 Angstroms.
 6. The lightemitting die of claim 1 wherein: the bonding stack includes a firstbonding portion and a second bonding portion; the first bonding portionis on a surface of the light emitting structure; and the second bondingportion is on a sidewall of the light emitting structure.
 7. The lightemitting die of claim 1 wherein: the bonding stack includes a firstbonding portion and a second bonding portion; the first bonding portionis on a surface of the light emitting structure; the second bondingportion is on a sidewall of the light emitting structure; and the lightemitting die further includes a passivation material on the sidewall ofthe light emitting structure, the passivation material abutting thesecond bonding portion.
 8. A method for manufacturing a lightingemitting device, comprising: forming a light emitting structure;depositing a barrier material, a mirror material, and a bonding materialon the light emitting structure, the bonding material containing nickel(Ni); placing the light emitting structure onto a silicon substrate withthe bonding material in contact with the silicon substrate; and bondingthe light emitting structure and the silicon substrate via forming anickel silicide (NiSi) material at an interface between the siliconsubstrate and the bonding material.
 9. The method of claim 8 whereinbonding the light emitting structure and the silicon substrate includesannealing the light emitting structure and the silicon substrate. 10.The method of claim 8 wherein: forming the light emitting structureincludes forming N-type gallium nitride (GaN), GaN/indium galliumnitride (InGaN) multiple quantum wells, and P-type GaN on a substratematerial in sequence and subsequently removing the substrate materialfrom the N-type GaN; the barrier material contains nickel (Ni); themirror material contains silver (Ag); and annealing the light emittingstructure and the silicon substrate includes: heating the light emittingstructure and the silicon substrate to a temperature from about 300° C.to about 450° C.; and maintaining the temperature for a heating periodof about 1 to 30 minutes under a bonding pressure of about 50 mPa toabout 100 mPa.
 11. The method of claim 8 wherein: the barrier materialcontains nickel (Ni); and the mirror material contains silver (Ag). 12.The method of claim 8 wherein: the barrier material contains nickel(Ni); the mirror material contains silver (Ag); and annealing the lightemitting structure and the silicon substrate includes forming the nickelsilicide (NiSi) material at the interface between the silicon substrateand the bonding material without completely consuming the bondingmaterial.
 13. The method of claim 8 wherein: the barrier materialcontains nickel (Ni); the mirror material contains silver (Ag); andannealing the light emitting structure and the silicon substrateincludes forming the nickel silicide (NiSi) material at the interfacebetween the silicon substrate and the bonding material withoutcompletely consuming the nickel (Ni) contained in the bonding material.14. The method of claim 8 wherein: the barrier material contains nickel(Ni); the mirror material contains silver (Ag); and annealing the lightemitting structure and the silicon substrate includes: forming thenickel silicide (NiSi) material at the interface between the siliconsubstrate and the bonding material; and maintaining a thickness of thebonding material greater than about 30 Angstroms after forming thenickel silicide (NiSi) material.
 15. The method of claim 8 wherein: thebarrier material contains nickel (Ni); the mirror material containssilver (Ag); and annealing the light emitting structure and the siliconsubstrate includes: reacting a portion of the nickel (Ni) contained inthe bonding material with the silicon (Si) contained in the siliconsubstrate to form the nickel silicide (NiSi) material; and bonding thesilicon substrate to the light emitting structure with the formed nickelsilicide (NiSi) material.
 16. A method for manufacturing a lightingemitting device, comprising: depositing a barrier material, a mirrormaterial, and a bonding material on a light emitting structure, thebonding material containing nickel (Ni); contacting the depositedbonding material with a carrier containing silicon (Si); reacting thenickel (Ni) in the bonding material with the silicon (Si) in the carrierat a bonding temperature, under a bonding pressure, and for a bondingperiod; and adjusting at least one of the bonding temperature, thebonding period, and the bonding pressure based on a target thickness ofthe bonding material remaining after the reaction.
 17. The method ofclaim 16 wherein the thickness of the bonding material remaining afterthe reaction is greater than about 30 Angstroms.
 18. The method of claim16, wherein the bonding material remaining after the reaction acts as abarrier material.
 19. The method of claim 16 wherein reacting the nickel(Ni) in the bonding material with the silicon (Si) in the carrierincludes forming nickel silicide (NiSi) at an interface between thecarrier and the bonding material remaining after the reaction.
 20. Themethod of claim 16 wherein: the barrier material contains nickel (Ni);the mirror material contains silver (Ag); the target thickness of thebonding material remaining after the reaction is greater than about 30Angstroms; the light emitting structure includes a first semiconductormaterial, an active region, and a second semiconductor material;sequentially depositing the barrier material, the mirror material, andthe bonding material includes depositing the barrier material on thesecond semiconductor material, depositing the mirror material on thebarrier material, and depositing the bonding material on the mirrormaterial; reacting the nickel (Ni) in the bonding material with thesilicon (Si) in the carrier includes forming nickel silicide (NiSi) atan interface between the carrier and the bonding material remainingafter the reaction; the method further includes: preventing the mirrormaterial from diffusing into the carrier with the bonding materialremaining after the reaction; and preventing the mirror material fromdiffusing into the second semiconductor material with the barriermaterial.
 21. A method of manufacturing a plurality of light emittingdevices, comprising: forming a plurality of light emitting dies on asubstrate via epitaxial growth; depositing a barrier material, a mirrormaterial, and a bonding material on the substrate in series, the bondingmaterial containing nickel (Ni); contacting the substrate, with acarrier, wherein the bonding material is in direct contact with asurface of the carrier, the carrier containing silicon (Si); formingnickel silicide (NiSi) at an interface between the carrier and thebonding material, thereby mechanically coupling the plurality of lightemitting dies to the carrier; and singulating the plurality of lightemitting dies mechanically coupled to the carrier to form a plurality oflight emitting devices.
 22. The method of claim 21 wherein forming theplurality of light emitting devices includes: sequentially depositingN-type gallium nitride (GaN), GaN/indium gallium nitride (InGaN)multiple quantum wells, and P-type GaN on the substrate; forming aplurality of openings in the deposited N-type GaN, GaN/InGaN multiplequantum wells, and P-type GaN, the individual openings separating twoadjacent light emitting dies; and depositing a passivation material intothe individual openings, the passivation material being in contact withat least the N-type GaN and the GaN/InGaN multiple quantum wells. 23.The method of claim 21 wherein forming the plurality of light emittingdevices includes: sequentially depositing N-type gallium nitride (GaN),GaN/indium gallium nitride (InGaN) multiple quantum wells, and P-typeGaN on the substrate; forming a plurality of openings in the depositedN-type GaN, GaN/InGaN multiple quantum wells, and P-type GaN, theindividual openings separating two adjacent light emitting dies;depositing a passivation material into the individual openings, thepassivation material being in contact with at least the N-type GaN andthe GaN/InGaN multiple quantum wells; and the deposited barriermaterial, mirror material, and bonding material include a first portionon the P-type GaN and a second portion in the openings.
 24. The methodof claim 23 wherein the second portion of the deposited barrier materialabuts the passivation material in the openings.
 25. The method of claim21 wherein forming the plurality of light emitting devices includes:sequentially depositing N-type gallium nitride (GaN), GaN/indium galliumnitride (InGaN) multiple quantum wells, and P-type GaN on the substrate;forming a plurality of openings in the deposited N-type GaN, GaN/InGaNmultiple quantum wells, and P-type GaN, the individual openingsseparating two adjacent light emitting dies; and singulating theplurality of light emitting dies includes singulating the plurality oflight emitting dies along the openings in the deposited N-type GaN,GaN/InGaN multiple quantum wells, and P-type GaN.
 26. The method ofclaim 21 wherein the deposited barrier material, mirror material, andbonding material are generally planar.